(Press-News.org)
X-ray detection is widely used in medical imaging, radioactivity detection, security checking, industrial flaw inspection, and so on. In recent years, metal halide perovskites have demonstrated excellent performances in the detection of X-rays and gamma-rays. However, most studies focus on perovskite single-pixel devices. To achieve the application goal of X-ray imagers, the detectors should be integrated with pixel circuits. This means that the device dark current is an important figure of merit to be considered. The low dark current can guarantee the response range and reduce noise fluctuations. In general, constructing junction devices is effective in suppressing the dark current. But for thick perovskite X-ray detectors, the performances of junction devices are generally poor, especially for p–n junctions. The underlying mechanism is still not clear.
A team of researchers, led by Prof. Guangda Niu from Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China, summarized and built a dark current model for thick perovskite X-ray detectors. They quantitatively evaluated the dark current requirement for X-ray imagers integrated with pixel circuits, which is as low as nanoampere per square centimeter. Moreover, as revealed by the semiconductor device analysis and simulation, the main current components of thick perovskite X-ray detectors include two kinds, the thermionic-emission current and the generation-recombination current. They designed multiple groups of experiments on Schottky and p-n junction device structures, to show that the typically observed failures of p–n junctions in thick detectors are caused by the high generation-recombination current due to the hetero-band mismatch and interface defects. The researchers believe that this work can provide a deep insight into the design of high sensitivity and low dark current perovskite detectors applying to X-ray imagers. The work entitled “Dark current modeling of thick perovskite X-ray detectors” was published on Frontiers of Optoelectronics (published on Dec. 15, 2022).
Reference: Shan ZHAO, Xinyuan DU, Jincong PANG, Haodi WU, Zihao SONG, Zhiping ZHENG, Ling XU, Jiang TANG, Guangda NIU. Dark current modeling of thick perovskite X-ray detectors. Front. Optoelectron., 2022, 15, 43. https://doi.org/10.1007/s12200-022-00044-1
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Founded in May 1954, Higher Education Press Limited Company (HEP), affiliated with the Ministry of Education, is one of the earliest institutions committed to educational publishing after the establishment of P. R. China in 1949. After striving for six decades, HEP has developed into a major comprehensive publisher, with products in various forms and at different levels. Both for import and export, HEP has been striving to fill in the gap of domestic and foreign markets and meet the demand of global customers by collaborating with more than 200 partners throughout the world and selling products and services in 32 languages globally. Now, HEP ranks among China's top publishers in terms of copyright export volume and the world's top 50 largest publishing enterprises in terms of comprehensive strength.
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About Frontiers of Optoelectronics
Frontiers of Optoelectronics (FOE) aims at introducing the most recent research results and the cutting edge improvements in the area of photonics and optoelectronics. It is dedicated to be an important information platform for rapid communication and exchange between researchers in the related areas. The journal publishes review articles, research articles, letters, comments, special issues, and so on. The Editors-in-Chief are Academician Qihuang Gong from Peking University and Prof. Xinliang Zhang from Xidian University & Huazhong University of Science and Technology. FOE has been indexed by ESCI, Ei, SCOPUS, DOAJ, PubMedCentral, CSCD, Source Journals for Chinese Scientific and Technical Papers and Citations, etc. FOE is fully open access since 2022.
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