MTJ device with the world’s highest TMR performance developed through precision interfacial control
The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record which had stood for 15 years. This was accomplished by fine-tuning the interfaces in a magnetic tunnel junction (MTJ). This MTJ exhibited very large TMR ratio oscillation effect with a peak-to-valley (PV) difference of 141%. This phenomenon may be exploitable to significantly increase the sensitivity of magnetic sensors and the capacity of magnetoresistive random access ...













