Field-effect transistors on hybrid perovskites fabricated for first time
(Winston-Salem, N.C. - May 5, 2015) - Researchers from Wake Forest University and the University of Utah are the first to successfully fabricate halide organic-inorganic hybrid perovskite field-effect transistors and measure their electrical characteristics at room temperature.
"We designed the structure of these field-effect transistors that allowed us to achieve electrostatic gating of these materials and determine directly their electrical properties," said lead author, Oana Jurchescu, an assistant professor of physics at Wake Forest. "Then we fabricated these transistors ...





