Researchers 'heal' plasma-damaged semiconductor with treatment of hydrogen radicals
Gallium nitride (GaN) is a highly promising material for a wide range of optical and high-power electronic devices, which can be fabricated by dry etching with plasmas. However, the plasma-induced defects and surface residues that remain after such processes tend to degrade the optical and electrical properties of the devices. A team of Japanese researchers has developed and tested a new way to "heal" such defects. The team exposed plasma-damaged GaN to hydrogen (H) radicals at room temperature. After testing various doses of H radicals, the researchers evaluated the optical ...





