New family of materials for energy-efficient information storage and processing
Switching the polarity of a magnet using an electric field (magnetoelectric memory [MEM] effect), can be a working principle of the next-generation technology for information processing and storage. Multiferroic materials are promising candidates for the MEM effect, due to the coexistence of electric and magnetic orders. On the other hand, the coexistence of spontaneous electric and magnetic polarizations is rare in known materials, which hinders the application potential of the MEM effect. This article briefly reviews a new family of multiferroic materials—hexagonal rare ...










