Advanced measurement technology for future semiconductor devices
1. Key points of the work
- An emerging semiconductor for future power devices, beta-gallium oxide (β-Ga2O3), was investigated using a technique called transmission terahertz time-domain spectroscopy (THz-TDS) for the first time
- The findings on the fundamental properties of β-Ga2O3 at THz frequencies are significant to the development of this semiconductor's power electronic applications
- THz-TDS can be used as a noninvasive tool for the evaluation of electrical properties instead of conventional electrical measurements that degrade the semiconductor quality
2. Overview of the work
The β-Ga2O3 ultra-wide bandgap (UWBG) ...










