New method to improve durability of nano-electronic components, further semiconductor manufacturing
University of South Florida researchers recently developed a novel approach to mitigating electromigration in nanoscale electronic interconnects that are ubiquitous in state-of-the-art integrated circuits. This was achieved by coating copper metal interconnects with hexagonal boron nitride (hBN), an atomically-thin insulating two-dimensional (2D) material that shares a similar structure as the "wonder material" graphene.
Electromigration is the phenomenon in which an electrical current passing through a conductor causes the atomic-scale erosion of the material, eventually resulting in device failure. Conventional semiconductor technology addresses this challenge by using a barrier or liner material, but this takes up precious space on the wafer that could otherwise be used to pack in ...












