Scientists uncovered mystery of important material for semiconductors at the surface
A team of scientists with the Department of Energy’s Oak Ridge National Laboratory has investigated the behavior of hafnium oxide, or hafnia, because of its potential for use in novel semiconductor applications.
Materials such as hafnia exhibit ferroelectricity, which means that they are capable of extended data storage even when power is disconnected and that they might be used in the development of new, so-called nonvolatile memory technologies. Innovative nonvolatile memory applications will pave the way for the creation of bigger and faster computer systems by alleviating the heat generated from the continual ...












