Dominant factor of carrier transport mechanism in multilayer graphene nanoribbons revealed
Researchers from Osaka University, Toyo University, and Kyushu Institute of Technology clarified the expression mechanism of semiconducting and metallic properties in graphene nanoribbons (GNRs) by analyzing the carrier transport properties in the field effect transistor (FET) with a multilayer GNR channel (Fig. 1).
The research team fabricated multilayer GNRs with precisely controlled numbers of layers via a chemical vapor deposition method using a solid template. "This enabled us to compare the observed carrier transport properties in the FET using a multilayer ...













